ROHM’s PM<span style='color:red'>ICs</span> for SoCs have been Adopted in Reference Designs for Telechips’ Next-Generation Cockpits
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ROHM’s PMICs for SoCs have been Adopted in Reference Designs for Telechips’ Next-Generation Cockpits

　　ROHM has announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs ‘Dolphin3’ (REF67003) and ‘Dolphin5’ (REF67005) by Telechips, a major fabless semiconductor manufacturer for automotive applications headquartered in Pangyo, South Korea. Intended for use inside the cockpits of European automakers, these designs are scheduled for mass production in 2025.　　ROHM and Telechips have been engaged in technical exchanges since 2021, fostering a close collaborative relationship from the early stages of SoC chip design. As a first step in achieving this goal, ROHM’s power supply solutions have been integrated into Telechips’ power supply reference designs. These solutions support diverse model development by combining sub-PMICs and DrMOS with the main PMIC for SoCs.　　For infotainment applications, the Dolphin3 application processor (AP) power reference design includes the BD96801Qxx-C main PMIC for SoCs. Similarly, the Dolphin5 AP power reference design developed for next-generation digital cockpits combines the BD96805Qxx-C and BD96811Fxx-C main PMICs for SoC with the BD96806Qxx-C sub-PMIC for SoC, improving overall system efficiency and reliability.　　Modern cockpits are equipped with multiple displays, such as instrument clusters and infotainment systems, with each automotive application becoming increasingly multifunctional. As the processing power required for automotive SoCs increases, power ICs like PMICs must be able to support high currents while maintaining high efficiency. At the same time, manufacturers require flexible solutions that can accommodate different vehicle types and model variations with minimal circuit modifications. ROHM SoC PMICs address these challenges with high efficiency operation and internal memory (One Time Programmable ROM) that allows for custom output voltage settings and sequence control, enabling compatibility with large currents when paired with a sub-PMIC or DrMOS.　　Moonsoo Kim,　　Senior Vice President and Head of System Semiconductor R&D Center, Telechips Inc.“Telechips offers reference designs and core technologies centered around automotive SoCs for next-generation ADAS and cockpit applications. We are pleased to have developed a power reference design that supports the advanced features and larger displays found in next-generation cockpits by utilizing power solutions from ROHM, a global semiconductor manufacturer. Leveraging ROHM’s power supply solutions allows these reference designs to achieve advanced functionality while maintaining low power consumption. ROHM power solutions are highly scalable, so we look forward to future model expansions and continued collaboration.”　　Sumihiro Takashima,　　Corporate Officer and Director of the LSI Business Unit, ROHM Co., Ltd.“We are pleased that our power reference designs have been adopted by Telechips, a company with a strong track record in automotive SoCs. As ADAS continues to evolve and cockpits become more multifunctional, power supply ICs must handle larger currents while minimizing current consumption. ROHM SoC PMICs meet the high current demands of next-generation cockpits by adding a DrMOS or sub-PMIC in the stage after the main PMIC. This setup achieves high efficiency operation that contributes to lower power consumption. Going forward, ROHM will continue our partnership with Telechips to deepen our understanding of next-generation cockpits and ADAS, driving further evolution in the automotive sector through rapid product development.”　　・ Telechips SoC [Dolphin Series]　　The Dolphin series consists of automotive SoCs tailored to In-Vehicle Infotainment (IVI), Advanced Driver Assistance Systems (ADAS), and Autonomous Driving (AD) applications. Dolphin3 supports up to four displays and eight in-vehicle cameras, while Dolphin5 enables up to five displays and eight cameras, making highly suited as SoCs for increasingly multifunctional next-generation cockpits. Telechips is focused on expanding the Dolphin series of APs (Application Processors) for car infotainment, with models like Dolphin+, Dolphin3, and Dolphin5, by leveraging its globally recognized technical expertise cultivated over many years.　　・ ROHM 's Reference Design Page　　Details of ROHM’s reference designs and information on equipped products are available on ROHM’s website, along with reference boards. Please contact a sales representative or visit ROHM’s website for more information.　　https://www.rohm.com/contactus　　■ Power Supply Reference Design [REF67003] (equipped with Dolphin3)　　Reference Board No. REF67003-EVK-001　　https://www.rohm.com/reference-designs/ref67003　　■ Power Supply Reference Design [REF67005] (equipped with Dolphin5)　　Reference Board No. REF67005-EVK-001　　https://www.rohm.com/reference-designs/ref67005　　About Telechips Inc.Telechips is a fabless company specialized in designing system semiconductors that serve as the “brains” of automotive electronic components. The South Korean firm offers reliable, high-performance automotive SoCs. In response to the industry’s transition toward SDVs (Software Defined Vehicles), Telechips is broadening its core portfolio beyond car infotainment application processors (APs) to include MCUs, ADAS, network solutions, and AI accelerators.　　As a global, comprehensive automotive semiconductor manufacturer, Telechips adheres to international standards such as ISO 26262, TISAX, and ASPICE, leveraging both hardware and software expertise for future mobility ecosystems, including not only automotive smart cockpits, but also E/E architectures. What’s more, Telechips provides optimal solutions for In-Vehicle Infotainment systems (IVI), digital clusters, and ADAS, all compliant with key automotive standards (AEC-Q100, ISO 26262). Telechips has established business relationships with major automakers both domestically and internationally, supported by a strong track record of shipments.　　One flagship product is the Dolphin5 automotive SoC that integrates an Arm®-based CPU, GPU, and NPU to meet high-performance requirements. As a fabless company, Telechips outsources the manufacturing of its SoCs to Samsung Electronics’ foundry, delivering high-quality semiconductor products to domestic and overseas manufacturers. For more information, please visit Telechips’ website:　　https://www.telechips.com/　　*Arm® is a trademark or registered trademark of Arm Limited.　　TerminologyPMIC (Power Management IC)　　An IC that contains multiple power supply systems and functions for power management and sequence control on a single chip. It is becoming more commonplace in applications with multiple power supply systems in both the automotive and consumer sectors by significantly reducing space and development load vs conventional circuit configurations using individual components (i.e. DC-DC converter ICs, LDOs, discretes).　　SoC (System-on-a-Chip)　　A type of integrated circuit that incorporates a CPU (Central Processing Unit), memory, interface, and other elements on a single substrate. Widely used in automotive, consumer, and industrial applications due to its high processing capacity, power efficiency, and space savings.　　AP (Application Processor)　　Responsible for processing applications and software in devices such as smartphones, tablets, and automotive infotainment systems. It includes components such as a CPU, GPU, and memory controller to efficiently run the Operating System (OS), process multimedia, and render graphics.　　DrMOS (Doctor MOS)　　A module that integrates a MOSFET and gate driver IC. The simple configuration is expected to reduce design person-hours along with mounting area and to achieve efficient power conversion. At the same time, the built-in gate driver ensures high reliability by stabilizing MOSFET drive.
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Release time：2024-12-20 13:56 reading：873 Continue reading>>
Valeo & ROHM Semiconductor co-develop the next generation of power electronics
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Valeo & ROHM Semiconductor co-develop the next generation of power electronics

　　Valeo, a leading automotive technology company, and ROHM Semiconductor, a major semiconductor and electronic component manufacturer, collaborate to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.　　Valeo is broadening access to efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the biggest one (eTrucks). By combining Valeo’s expertise in mechatronics, thermal management and software development with ROHM’s power modules, Valeo drives the power electronics solution forward, contributing to the performance, efficiency, and decarbonization of automotive systems worldwide.　　Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter – a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs). By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging.　　“This partnership marks, for Valeo Power Division, a significant step forward in delivering advanced and high-efficient power electronics,” says Xavier DUPONT, Valeo Power Division CEO. “Together, we aim to set new industry standards for high voltage inverters and accelerate the transition towards more efficient and affordable electric mobility.”　　“We are pleased to support Valeo, a renowned automotive supplier, with our power semiconductors. ROHM’s TRCDRIVE pack™ provides high power density, leading to an improved power efficiency. Together, we contribute to the development of highly efficient powertrains by fostering the collaboration with Valeo,” says Wolfram HARNACK, President ROHM Semiconductor GmbH.　　These evolutions are all essential to supporting the growing demand for longer range, faster charging capabilities, and, overall a high-performance and an affordable inverter for BEVs and PHEVs.　　Valeo will start supplying a first series project in early 2026. Valeo and ROHM will contribute to the improvement of efficiency and downsizing of Valeo’s next generation of xEV inverters.　　Background on the TRCDRIVE pack™　　TRCDRIVE pack™ is a trademark for the SiC molded module developed for traction inverter drives. This product features high power density and a unique terminal configuration – solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours. Because SiC enables low-loss power conversion under high voltage conditions, combining Valeo's component technology, casing design and thermal management expertise with ROHM's power module creates a synergistic effect. Through both companies’ collaboration in automotive power electronics, they contribute to achieving a decarbonized society by enhancing the performance and efficiency of the motor inverter.　　More information is available via:　　https://www.rohm.com/news-detail?news-title=2024-06-11_news_trcdrive-pack&defaultGroupId=false　　TRCDRIVE pack™ are trademarks or registered trademarks of ROHM Co., Ltd.　　About Valeo　　Valeo is a technology company and partner to all automakers and new mobility players worldwide. Valeo innovates to make mobility safer, smarter and more sustainable. Valeo enjoys technological and industrial leadership in electrification, driving assistance systems, reinvention of the interior experience and lighting everywhere. These four areas, vital to the transformation of mobility, are the Group's growth drivers.　　Valeo in figures: 22 billion euros in sales in 2023 | 109 600 employees, 28 countries, 159 plants, 64 research and development centers and 19 distribution platforms at June 30, 2024.　　https://www.valeo.com/　　Valeo is listed on the Paris stock Exchange.
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Release time：2024-11-29 10:49 reading：469 Continue reading>>
ROHM’s New PWM Controller <span style='color:red'>ICs</span> with SOP Package for Power Supply in a Wide Variety of Industrial Applications
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ROHM’s New PWM Controller ICs with SOP Package for Power Supply in a Wide Variety of Industrial Applications

　　ROHM has developed external FET-type controller ICs utilizing PWM current control mode optimized for AC-DC power supply in various industrial applications. Mass production has begun for four variants designed to drive a wide range of power semiconductors: the BD28C55FJ-LB for low-voltage MOSFETs, BD28C54FJ-LB for medium- to high-voltage MOSFETs, BD28C57LFJ-LB for IGBTs, and BD28C57HFJ-LB for SiC MOSFETs.　　Although the global semiconductor shortage is beginning to ease, the supply of semiconductor components for power supplies in industrial applications continues to lag behind demand. This is particularly true for PWM controller ICs, where the limited number of manufacturers has resulted in chronic shortages, leading to numerous requests for product development.　　In response, ROHM has developed PWM controller ICs that address the ongoing supply issue by meeting the industrial market’s stringent package and performance requirements. Depending upon the input AC voltage range of the application, a wide variety of semiconductors are used for power supply circuit. Each of these semiconductors demand different undervoltage lock out levels to prevent thermal runaway in case of supply/gate voltage drop. To solve this issue, ROHM has developed 4 variants with different undervoltage lock out levels.　　The new products feature an input voltage range of 6.9V to 28.0V, circuit current up to 2.0mA, maximum startup current of 75µA, and a maximum duty cycle of 50%, offered in the standard SOP-J8 package (equivalent to the JEDEC SOIC8). The products are pin to pin compatible to standard products commonly used in power supply circuits, thus reducing re-design and modification efforts. All variants are equipped with a self-recovery-type undervoltage lockout function (UVLO) with voltage hysteresis. This significantly improves application reliability by reducing the threshold voltage error to ±5%, compared to the typical ±10% of standard products.　　At the same time, these ICs are designated for long-term supply, thus ensuring continuous operation of long-life industrial equipment. Going forward, the lineup will be further expanded to include products suitable to drive high-voltage MOSFETs and GaN devices. More variants to support a maximum duty cycle of 100% are also being planned.　　Application ExamplesIndustrial equipment: AC-DC power supplies, motor drive inverters, and other AC-powered devices　　Product Information　　Applicable Part Nos: BD28C54FJ-LB, BD28C55FJ-LB, BD28C57HFJ-LB, BD28C57LFJ-LB　　TerminologyPWM Control Type　　Short for Pulse Width Modulation, a method for controlling power using semiconductors. The output power is controlled by varying the ratio of ON and OFF times within a fixed cycle.　　Duty Cycle　　The proportion of ON and OFF times as percentage of the switching period is known as ON- and OFF-duty cycle, respectively. It is common to refer to the ON-time ratio as the duty cycle. Duty Cycle (%) = Pulse Width (t) / Period (T).　　Self-Recovery Undervoltage Lockout Function (UVLO) with Voltage Hysteresis　　This function safety stops IC operation before the circuit inside the IC becomes abnormal when the input voltage drops below a threshold. For self-recovery types, the IC can become unstable by repeatedly stopping and starting near the threshold voltage, so a protection circuit with hysteresis is used to create a voltage difference between the stop and restart points.
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Release time：2024-10-08 14:42 reading：760 Continue reading>>
What are TVS diodes in safeguarding electronics
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What are TVS diodes in safeguarding electronics

　　In today’s interconnected world, electronic devices and systems are ubiquitous, powering our homes, workplaces, and communication networks. However, these devices are vulnerable to voltage transients—brief surges in voltage that can occur due to lightning strikes, electrostatic discharge (ESD), or switching transients in the electrical system.　　To protect sensitive electronic components from such transients, Transient Voltage Suppressor TVS diodes play a crucial role. This article explores the functionality, applications, and importance of TVS diodes in safeguarding electronics.　　What is a Transient Voltage Suppressor (TVS) Diode?A Transient Voltage Suppressor (TVS) diode is a semiconductor device used to protect sensitive electronic components from voltage spikes or transient voltages that could potentially damage them. These spikes can be caused by events such as lightning strikes, electrostatic discharge (ESD), or switching transients in the electrical system.　　The TVS diode operates by providing a low-impedance path to divert excess voltage away from the protected components, thus limiting the voltage across them. When a transient voltage exceeds the breakdown voltage (also known as the clamping voltage or avalanche voltage) of the TVS diode, it starts to conduct, effectively shunting the excess current away from the protected circuit.　　What are the features of TVS diodes?Fast Response Time: TVS diodes respond quickly to transient events, providing protection within nanoseconds to microseconds.　　Low Clamping Voltage: The clamping voltage is the maximum voltage that the TVS diode allows to pass through to the protected circuit. It is typically lower than the voltage tolerance of the protected components, ensuring they remain safe.　　High Surge Current Capability: TVS diodes are designed to handle high surge currents associated with transient events, protecting the circuit from damage.　　Low Leakage Current: When not conducting, TVS diodes have low leakage current, minimizing power consumption and ensuring minimal impact on the protected circuit during normal operation.　　Robustness: TVS diodes are robust devices, able to withstand multiple transient events without degradation in performance.　　What are the applications of TVS diode?TVS diodes are commonly used in various applications, including:　　Protection of integrated circuits (ICs), microcontrollers, and other semiconductor devices from ESD and voltage transients.　　Protection of communication ports (such as USB, Ethernet, HDMI) and data lines in electronic equipment.　　Surge protection for power supply lines, signal lines, and sensor inputs in industrial and automotive electronics.　　Protection of sensitive electronic equipment against lightning-induced surges in telecommunications, power distribution, and other infrastructure.　　What’s the difference between TVS Diodes and Zener Diodes?TVS (Transient Voltage Suppressor) diodes and Zener diodes are both semiconductor devices used for voltage regulation, but they serve different purposes and operate in different ways. Here are the key differences between TVS diodes and Zener diodes:　　Purpose:　　• TVS Diodes: TVS diodes are primarily used for transient voltage suppression, meaning they protect electronic circuits from voltage spikes or transients caused by events like lightning strikes, electrostatic discharge (ESD), or inductive switching. Their main function is to provide surge protection and prevent damage to sensitive components.　　• Zener Diodes: Zener diodes are used for voltage regulation and voltage reference. They operate in the breakdown region and maintain a constant voltage across their terminals when reverse biased. Zener diodes are commonly used in voltage regulation circuits, voltage clamping circuits, and voltage reference circuits.　　Operating Principle:　　• TVS Diodes: TVS diodes operate by avalanche breakdown or Zener breakdown. When the voltage across a TVS diode exceeds its breakdown voltage, it starts to conduct heavily, providing a low-impedance path for excess current and diverting it away from the protected circuit.　　• Zener Diodes: Zener diodes operate in the reverse-biased breakdown region, where they maintain a constant voltage (known as the Zener voltage) across their terminals. They regulate voltage by allowing current to flow in the reverse direction when the applied voltage exceeds the Zener voltage.　　Voltage Characteristics:　　• TVS Diodes: TVS diodes typically have a very low clamping voltage (Vc) and are designed to handle high surge currents associated with transient events. They are optimized for fast response times and high-energy absorption capabilities.　　• Zener Diodes: Zener diodes have a well-defined breakdown voltage (Vz) at which they operate. The voltage across a Zener diode remains relatively constant over a wide range of currents when reverse biased, making them suitable for voltage regulation applications.　　Applications:　　• TVS Diodes: TVS diodes are used in applications requiring protection against voltage transients, such as in power supplies, communication ports (USB, Ethernet), data lines, and electronic equipment exposed to harsh environments or prone to ESD.　　• Zener Diodes: Zener diodes find applications in voltage regulation circuits, voltage references, voltage clamping circuits, reverse voltage protection, and precision voltage measurement circuits.　　How do TVS diodes work?　　TVS diodes work by providing a low-impedance path for excess voltage, diverting it away from sensitive electronic components and limiting the voltage across them to safe levels. They operate based on two main mechanisms: avalanche breakdown and Zener breakdown. Here’s how TVS diodes work:　　Avalanche BreakdownTVS diodes are typically fabricated with a highly doped semiconductor material that has a narrow depletion region. When the diode is reverse-biased (i.e., the voltage applied across it is in the opposite direction of its normal operation), the electric field across the depletion region increases.　　If the applied reverse voltage exceeds a certain threshold known as the breakdown voltage (also called clamping voltage or avalanche voltage), the strong electric field can accelerate charge carriers (electrons and holes) to high energies.　　These high-energy charge carriers collide with other atoms in the semiconductor lattice, generating additional charge carriers through impact ionization. This process cascades, resulting in a sudden increase in current flow through the diode.　　As a result, the TVS diode effectively clamps the voltage across its terminals at the breakdown voltage, providing a low-impedance path for excess current and limiting the voltage seen by the protected circuit.　　Zener BreakdownIn addition to avalanche breakdown, some TVS diodes may also utilize Zener breakdown to provide transient voltage suppression. Zener breakdown occurs when the reverse-biased diode operates in its Zener breakdown region.　　In this region, the diode behaves as a voltage regulator, maintaining a relatively constant voltage (known as the Zener voltage) across its terminals. When the applied reverse voltage exceeds the Zener voltage, the diode starts conducting heavily, effectively clamping the voltage across it.　　What causes a TVS diode to fail?TVS diodes are designed to withstand high levels of transient voltage and provide protection to sensitive electronic components. However, like any electronic component, TVS diodes can fail under certain conditions. Here are some common causes of TVS diode failure:　　Overvoltage Conditions: If the transient voltage exceeds the maximum rated clamping voltage (avalanche or Zener breakdown voltage) of the TVS diode, it may fail to suppress the transient effectively. This can happen if the transient event is exceptionally severe or if the TVS diode is underspecified for the application.　　Overcurrent Conditions: Excessive current flowing through the TVS diode, either due to a high-energy transient event or a sustained fault condition, can cause the diode to fail. Overcurrent can lead to thermal overstress, causing the diode to overheat and potentially short or open circuit.　　Reverse Polarity: Applying a reverse voltage beyond the maximum reverse voltage rating of the TVS diode can cause it to fail. This can occur due to improper installation or incorrect wiring in the circuit.　　End-of-Life Wear-Out: Like all semiconductor devices, TVS diodes have a limited lifespan, and their performance may degrade over time due to factors such as aging, temperature cycling, and electrical stress. As the diode approaches the end of its life, its ability to suppress transients effectively may diminish, leading to failure.　　Excessive Power Dissipation: TVS diodes are specified with maximum power dissipation ratings. Exceeding these ratings, either due to sustained overvoltage conditions or prolonged exposure to transient events, can cause the diode to overheat and fail.　　Manufacturing Defects: Rarely, TVS diodes may fail due to manufacturing defects such as material impurities, processing errors, or incomplete encapsulation. These defects can compromise the electrical and thermal performance of the diode, leading to premature failure.　　Improper Handling or Installation: Mishandling or improper installation of TVS diodes, such as mechanical stress during assembly, soldering defects, or exposure to corrosive environments, can lead to physical damage or degradation of the diode, resulting in failure.　　ConclusionTVS diodes are essential components in protecting electronic devices and systems from voltage transients. Their ability to clamp voltages and divert excess current away from sensitive components plays a vital role in ensuring the reliability and durability of modern electronics. As the demand for high-performance and reliable electronic products continues to grow, the importance of TVS diodes in safeguarding electronics will only increase, making them indispensable in today’s interconnected world.
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Release time：2024-07-16 13:08 reading：676 Continue reading>>
Fibocom Drives the Rapid Growth in the Economics of IoT Scale with Ultra-compact size Cat 1 bis Module MC610-GL at MWC Shanghai 2024
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Fibocom Drives the Rapid Growth in the Economics of IoT Scale with Ultra-compact size Cat 1 bis Module MC610-GL at MWC Shanghai 2024

　　Fibocom (Stock code: 300638), a global leading provider of IoT (Internet of Things) wireless solutions and wireless communication modules, announces the new member of its LTE Cat 1 bis module portfolio featuring high reliability, ultra-compact size and cost-effectiveness at MWC Shanghai 2024. The MC610-GL is positioned to foster the economics of IoT scale in vertical markets across asset tracking, E-mobility, AMI (Advanced Metering Infrastructure), etc.　　The Global Cellular IoT Module market shows a 7% year-over-year (YoY) growth in Q1 2024, according to the latest reports by IoT Analytics. Despite ongoing inventory and demand issues in several other regions globally, technologies like 5G and LTE Cat-1 bis have seen a combined market growth of 67% year-over-year, signifying their substantial contribution to the cellular IoT module market's overall growth. “The statistics have verified Cat 1 bis’ driving forces in bringing affordable and reliable wireless connectivity service to a diversified IoT landscape, even though 5G remains strong performance in the data-intensive scenarios, and Cat 1 bis takes the lead in the mainstream low and medium speed market thanks to the worldwide 4G infrastructure,” said Kevin Guan, Director of MTC Product Marketing at Fibocom. “Without a doubt, we are optimistic in expanding the utilization of Cat 1 bis technology in segment areas and providing the value-added reference design service to industry customers. Looking forward, the MC610-GL is expected to address its top performance in the global market and accelerate the large-scale IoT deployment worldwide.”　　Developed from the UNISOC 8910DM platform, the MC610-GL supports major carrier frequency bands worldwide and complies with rich network standards, thus ensuring uninterrupted wireless connection anywhere, anytime, especially catering to asset tracking scenarios. It adopts an ultra-compact LCC+LGA form factor design measured at 24.2 x 26.2 x 2.1mm with dual-mode (4G+2G) supported, providing great convenience for customers to switch from LTE Cat M to Cat 1 bis at the minimum investment. Equipped with rich standard interfaces, the module empowers a wide range of low-to-medium speed IoT industries with up to 10Mbps downlink data transmission rate while conserving significant cost. Leveraging the industry capabilities within Fibocom, customers are catered to the reference design service and support, reducing the lead time to market. In addition, regional versions for EMEA (MC610-EU) and Latin America (MC610-LA) are flexibly adjustable in request to customers’ cost concerns.
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Release time：2024-07-03 13:57 reading：869 Continue reading>>
ROHM’s New Energy-Saving DC-DC Converter <span style='color:red'>ICs</span> Offered in the TSOT23 Package
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ROHM’s New Energy-Saving DC-DC Converter ICs Offered in the TSOT23 Package

　　ROHM has developed four new compact DC-DC step-down converter ICs suitable for consumer and industrial applications, including refrigerators, washing machines, PLCs, and inverters. ROHM is expanding the lineup which includes the BD9E203FP4-Z, a 2A buck converter with switching frequency of 350kHz.　　In recent years, increasing application functionality in consumer devices and industrial equipment is driving the demand to minimize board space, resulting in a rise in the adoption rate of compact DC-DC converter ICs.　　Furthermore, as reducing standby power consumption is becoming a significant challenge, there is a growing need for DC-DC converter ICs to deliver higher efficiency during light load (low power) conditions. To meet these demands, ROHM developed products that achieve higher efficiency in an even smaller package than existing SOP-J8 (JEDEC standard: SOIC8 equivalent) products.　　The new converter ICs deliver an output current of 1A to 3A in the compact TSOT23 package (2.8mm × 2.9mm). This reduces component area by up to 72% compared to the general SOP-J8 package (4.9mm × 6.0mm), contributing to the miniaturization of power supply blocks. On top, adopting a flip chip on lead frame TSOT23 package design enables high-efficiency operation by eliminating bond wire resistance.　　The BD9E105FP4-Z, BD9E202FP4-Z, and BD9E304FP4-LBZ also utilize a COT control mode during light load operation. As a result, efficiency during light load operation is improved over standard products, making them ideal for applications requiring low standby power consumption.　　Going forward, ROHM will continue to focus on developing products that leverage analog design technologies, contributing to greater miniaturization and energy efficiency in consumer and industrial equipment applications.　　Application Examples3.3V/5V/12V/24V power supply applications　　Consumer Appliances:　　Refrigerators, washing machines, air conditioners, etc.　　Industrial Equipment:　　PLCs (Programmable Logic Controllers), inverters, AC servos, etc.　　Online Sales InformationSales Start Date: March 2024 (in succession)　　Pricing: $3.0/unit (samples, excluding tax)　　Online Distributors: DigiKey, Mouser and Farnell　　The products will be offered at other online distributors as they become available.　　Product Information　　In addition to the ICs, evaluation boards together with various support tools are available that enable immediate evaluation during application design.　　Various Support Tools• Calculation Sheet：A calculation tool for application circuits that facilitates external constant design. By setting values as described, users will be able to determine the circuit parameters that satisfy the desired characteristics.　　The sheet is available for download from the ‘Tools’ section on each product page on ROHM’s website.　　[BD9E105FP4-Z / BD9E304FP4-LBZ / BD9A201FP4-LBZ]　　• ROHM Solution Simulator：A free simulation tool that runs on ROHM’s website. Changing the external constants in the topology described in the datasheet allows the optimal solution for frequency response (for a power supply) to be considered.　　[BD9E105FP4-Z / BD9E202FP4-Z / BD9E304FP4-LBZ / BD9A201FP4-LBZ]　　*Logging in to MyROHM is required to use the tool.　　• Other Content: SPICE models for circuit simulation along with application notes that contain useful information on thermal design, circuit design, and verification can also be downloaded from each product page.　　TerminologyCOT (Constant ON Time) Control Method　　A feedback circuit control method for stabilizing the output voltage. When the feedback voltage drops below the reference voltage, the switching element turns ON, then automatically turns OFF after a fixed time has elapsed. This enables stable output to be efficiently obtained at light loads.　　Spurious　　Unnecessary electromagnetic waves that deviate from the originally required predetermined frequency.　　Overshoot Prevention Function　　If the output current of the power supply IC exceeds the expected value, the output is shut down by the OCP (overcurrent protection) function. When recovering from a shutdown, a momentary overshoot (excessive output voltage) occurs, causing a delay in recovery, so it is necessary to expedite recovery and suppress overshoot.　　ESD (Electrostatic Discharge)　　Static electricity (surge) is generated when electrically charged objects come into contact with each other. This static electricity (surge) may cause circuits and equipment to malfunction or destruction.　　EMI (Electromagnetic Interference)　　EMI is used as an indicator for how much noise is generated when operating the target product, which may cause problems in surrounding ICs and systems. ‘Good EMI characteristics’ mean that less noise is generated.
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Release time：2024-04-26 13:43 reading：723 Continue reading>>
ROHM Group Company SiCrystal and STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement
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ROHM Group Company SiCrystal and STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement

　　Kyoto, Japan and Geneva, Switzerland, April 22, 2024 – ROHM (TSE: 6963) and STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, announced today the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million.　　Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented “This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions”.　　“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC substrate wafers for many years. We are very pleased to extend this supply agreement with our longstanding customer ST. We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously and by always providing reliable quality”. said Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company.　　Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way. By facilitating more efficient energy generation, distribution and storage, SiC supports the transition to cleaner mobility solutions, lower emissions industrial processes and a greener energy future, as well as more reliable power supplies for resource-intensive infrastructure like data centers dedicated to AI applications.　　About STMicroelectronics　　At ST, we are over 50,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We are committed to achieving our goal to become carbon neutral on scope 1 and 2 and partially scope 3 by 2027.　　Further information can be found at www.st.com .　　About ROHM　　Founded in 1958, ROHM provides ICs and discrete semiconductor devices characterized by outstanding quality and reliability for a broad range of markets, including automotive, industrial equipment and consumer market via its global development and sales network.　　In the analog power field, ROHM proposes the suitable solution for each application with power devices such as SiC and driver ICs to maximize their performance, and peripheral components such as transistors, diodes, and resistors.　　Further information on ROHM can be found at www.rohm.com .　　About SiCrystal　　SiCrystal, a ROHM group company, is one of the global market leaders for monocrystalline silicon carbide wafers. SiCrystal’s advanced semiconductor substrates provide the basis for the highly efficient use of electrical energy in electric vehicles, fast charging stations, renewable energies and in various fields of industrial applications.　　Further information on SiCrystal can be found at www.sicrystal.de .
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Release time：2024-04-24 11:10 reading：1254 Continue reading>>
ROHM Develops Automotive Primary LDOs: Leveraging Original QuiCur™ Technology to Achieve Industry-Leading* Load Response Characteristics
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ROHM Develops Automotive Primary LDOs: Leveraging Original QuiCur™ Technology to Achieve Industry-Leading* Load Response Characteristics

　　ROHM has developed 45V rated 500mA output primary LDO regulators: BD9xxM5-C (BD933M5EFJ-C / BD950M5EFJ-C / BD900M5EFJ-C / BD933M5WEFJ-C / BD950M5WEFJ-C / BD900M5WEFJ-C). These devices are suitable for supplying power to automotive electronic components such as ECUs that operate from vehicle batteries.　　In recent years, the number of onboard power supply system and functions continues to grow as electrification in the automotive industry progresses. This increases the demand for primary LDOs that can directly step down the battery voltage to MCUs and other components used in ECUs. However, the energy supplied by the vehicle’s lead-acid battery is often subject to sudden voltage fluctuations, which primary LDOs are required to provide with excellent line-transient response in these conditions.　　At the same time, ECUs and other downstream devices often experience load current variations during operation, that also demand excellent load-transient response characteristics. A high frequency response is essential for fast output voltage recovery, but it has been difficult to provide sufficient phase margin at the same time to ensure stable operation. In response, ROHM developed a novel solution that addresses these challenges.　　The BD9xxM5-C incorporates original QuiCur™ high-speed load response technology that delivers excellent response characteristics to load current fluctuations. For example, the LDO can maintain output to within 100mV of set voltage even as the load changes between 0 and 500mA in 1μs (Rise time/Fall time). Furthermore, low 9.5µA (typ.) current consumption contributes to lower power consumption in automotive applications. These new products will be available in four packages, ranging from the compact HTSOP-J8 to the high heat dissipation TO252 (TO252-3/TO252-5) and HRP5 types. This allows users to select the most suitable package for each use case.　　Going forward, ROHM will continue to improve reliability while reducing power consumption in automotive applications by developing products utilizing its strengths in analog and other technologies.　　Product LineupThe new BD9xxM5-C meets the basic requirements for automotive products, including 150°C operation and qualification under the AEC-Q100 automotive reliability standard. A wide range of packages will be available to select from depending on the application environment, all featuring excellent response performance and low current consumption using proprietary QuiCur™ technology.　　The lineup will be expanded to comprise a total of 18 models, (including the TO252-3, TO252-5, and HRP5 packages) by FY2024.　　Application ExamplesSuitable for a wide range of automotive applications such as ECUs that operate on vehicle primary power supply systems.　　• Powertrain: Fuel Injection (FI), Tire Pressure Monitoring System (TPMS)　　• Body systems: Body Control Modules　　• Infotainment: Instrument Clusters, Head-Up Displays (HUDs)　　QuiCur™ High-Speed Load Response TechnologyQuiCur™ is the name of ROHM’s proprietary ‘Quick Current’ high-speed load response circuit capable of maximizing load response characteristics (response performance) without causing instability in the feedback circuits of power supply ICs.　　Stable operation of the power supply IC is also possible with minimal output capacitance. And in the case of switching regulators, which are a type of power supply IC, it is possible to linearly adjust the capacitance and output voltage fluctuation to easily achieve stable operation even when the capacitance is changed due to specification changes, significantly reducing the number of person-hours required for power circuit design - both in terms of decreasing component count and ensuring stable operation.　　Click on the URL below for more information on QuiCur™ Technology.　　https://www.rohm.com/news-detail?news-title=rohm-establishes-quicur-that-maximizes-the-response-performance-of-power-supply-ics&defaultGroupId=false　　• QuiCur™ is a trademark or registered trademark of ROHM Co., Ltd.　　Support ToolsROHM Real Models are high accuracy SPICE models that utilize original model-based technology to faithfully reproduce the electrical and temperature characteristics of the actual IC, resulting in a perfect match between the IC and simulation values. This ensures reliable verification, contributing to more efficient application development - for example by preventing rework after prototyping.　　ROHM Real Models are now available on ROHM’s website (see link below).　　https://www.rohm.com/products/power-management/linear-regulators/single-output-ldo-regulators?page=1&PS_ProductSeries=BD9xxM5%20series&PS_SpiceLink=1.0#parametricSearch　　Online Sales InformationSales Launch Date: February 2024　　Pricing: $1.5/unit (samples, excluding tax)　　Online Distributors: DigiKey, Mouser and Farnell　　The products will be sold at other online distributors as well.　　Applicable Part Nos: BD950M5EFJ-C, BD933M5WEFJ-C, BD950M5WEFJ-C, BD900M5WEFJ-C　　TerminologyPrimary　　In a power supply circuit, the side in charge of 1st stage conversion from a power source such as a battery is called the primary and the side responsible for 2nd stage conversion referred to as the secondary.　　LDO Regulator (Low Drop Out/Low Saturation Regulator)　　A type of power supply IC that converts between two different DC voltage levels. Falls under the category of linear regulator (where the input/output voltages operate linearly) characterized by a small input-output voltage difference. Compared to DC-DC converter ICs (switching regulators), LDOs feature a simpler circuit configuration and lower noise.　　Load Current　　From the point of view of the power supply ICs, all electronic circuits in the subsequent stages, including MCUs and sensors, can be considered “loads”. When these loads operate, a (load) current flows, causing the output voltage of the power supply IC to undershoot (drop) or overshoot. Load transient response characteristics refer to the response time until the changed voltage due to load current is restored and the power supply stabilizes.
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Release time：2024-03-27 11:07 reading：586 Continue reading>>
CG Power and Industrial Solutions Limited, Renesas and Stars Microelectronics, to Jointly Build Outsourced Semiconductor Assembly and Test Facility in India
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CG Power and Industrial Solutions Limited, Renesas and Stars Microelectronics, to Jointly Build Outsourced Semiconductor Assembly and Test Facility in India

　　CG Power and Industrial Solutions Limited (“CG”), a part of Tube Investments of India Limited and the Murugappa Group; Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions; and Stars Microelectronics (Thailand) Public Co. Ltd (“Stars Microelectronics”), a Thailand-based Outsourced Semiconductor Assembly and Test (OSAT) provider; had recently signed a Joint Venture Agreement (JVA) to establish a Joint Venture (JV) to build and operate an OSAT facility in India. The Union Cabinet, chaired by Prime Minister Shri Narendra Modi, approved the project of the JV under India’s Semiconductor scheme on February 29, 2024.　　The JV brings together unique capabilities of the partners with a vision to “Make in India for the World.” CG, with around 86 years of manufacturing expertise, is keen to build semiconductor capabilities and ecosystem in India. Renesas, a leading semiconductor company headquartered in Japan, will provide advanced semiconductor technology and expertise. Stars Microelectronics, a Thai based OSAT, will provide both technology for legacy packages and training and enablement.　　The JV will be 92.3% owned by CG, with Renesas and Stars Microelectronics each holding equity capital of approximately 6.8% and 0.9%, respectively. The JV plans to invest INR 7,600 crores over a five-year period, which will be financed through a mix of subsidies, equity, and potential bank borrowings as required.　　The JV will set up a state-of-the-art manufacturing facility in Sanand, Gujarat, with a capacity that will ramp up to 15 million units per day. The JV will manufacture a wide range of products – ranging from legacy packages such as QFN and QFP to advanced packages such as FC BGA, and FC CSP. The JV will cater to industries such as automotive, consumer, industrial, 5G, to name a few.　　Commenting on this new venture, Mr. S. Vellayan, Chairman, CG Power and Industrial Solutions Limited, said, “CG’s entry into the semiconductor manufacturing marks a strategic diversification for us. Our partners, Renesas and Stars Microelectronics, will make our learning curves steeper and help us focus on innovation and excellence.　　This is a very exciting phase for the entire nation, and we are very keen to build out India’s semiconductor capability and ecosystem.”　　Mr. Natarajan Srinivasan, Managing Director, CG Power and Industrial Solutions Limited, added, “It is a matter of great pride for CG to implement this project of National importance.”　　Commenting on the partnership, Mr. Hidetoshi Shibata, CEO of Renesas said, “India is a critical part of Renesas’ business. We value its innovative landscape and robust potential growth and are committed to accelerating our investment in India. By partnering with the Murugappa Group and Stars Microelectronics, we will bolster India’s semiconductor ecosystem and address the growing semiconductor demand for the customers worldwide.”　　Mr. Prompong Chaikul, Chairman of Executive Committee of Stars Microelectronics (Thailand) Public Co., Ltd added, "We are deeply honored to join forces in this thrilling venture. Leveraging our expertise and experience in OSAT, we are committed to providing robust support to ensure the success of this project in India."　　About CG Power and Industrial Solutions Limited　　CG Power and Industrial Solutions Limited is an engineering conglomerate headquartered in Mumbai, India. The Company is a leader in the Electrical Engineering Industry and has two business lines—Industrial Systems and Power Systems. It manufactures Traction Motors, Propulsion systems, Signaling Relays etc., for the Indian Railways, and wide range of Induction Motors, Drives, Transformers, Switchgears, and other allied products for the Industrial and Power sectors. Recently, the Company also made a foray into the business of Consumer Appliances such as Fans, Pumps and Water Heaters.　　The Company has world-class manufacturing plants across 9 locations in India and one in Sweden, and a Pan India network of 4 Regional and 15 Branch offices, with around 3000 employees. The Company’s consolidated revenue for FY23 was Rs 6,973 crores (USD 838 million).　　The Company continues to excel and maintain its leadership position across its businesses, backed by its outstanding expertise, customer-centric approach, and enhanced focus on innovation and sustainability.　　Since November 2020, the Company has become a part of the renowned Murugappa Group.　　About Murugappa Group　　A 123-year-old conglomerate with presence across India and the world, the INR 742 billion Murugappa Group has diverse businesses in agriculture, engineering, financial services and more.　　The Group has 9 listed companies under its umbrella — Carborundum Universal Limited, CG Power & Industrial Solutions Limited, Cholamandalam Financial Holdings Limited, Cholamandalam Investment & Finance Company Limited, Cholamandalam MS General Insurance Company Limited, Coromandel International Limited, EID Parry (India) Limited, Shanthi Gears Limited, Tube Investments of India Limited and Wendt India Limited. Brands such as Ajax, Hercules, BSA, Montra, Montra Electric, Mach City, Gromor, Paramfos, Parry’s are part of the Group’s illustrious stable.　　Abrasives, technical ceramics, electro minerals, electric vehicles, auto components, fans, transformers, signaling equipment for railways, bicycles, fertilizers, sugar, tea and several other products make up the Group’s business interests.　　Guided by the five lights — integrity, passion, quality, respect and responsibility — and a culture of professionalism, the Group has a workforce of over 73,000 employees.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation  empowers a safer, smarter and more sustainable future where technology helps make our lives easier. The leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live.
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Release time：2024-03-05 13:10 reading：2817 Continue reading>>
Japan’s First Moon Lander Touches Down with Renesas’ Rad-Hard <span style='color:red'>ICs</span> on Board
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Japan’s First Moon Lander Touches Down with Renesas’ Rad-Hard ICs on Board

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced today that its radiation-hardened (rad-hard) ICs were onboard the Smart Lander for Investigating Moon (SLIM) spacecraft that successfully touched down on the Moon’s low latitude area on January 20, Japan Standard Time.　　Operated by the Japan Aerospace Exploration Agency (JAXA), SLIM launched onboard a H-IIA rocket from the Tanegashima Space Center, Japan on September 7, 2023. The Moon landing represents a significant milestone for Japan, as it becomes only the fifth country to successfully touch down and operate a lunar lander, after Russia, the United States, China and India.　　The spacecraft landed near the Shioli Crater, in the vicinity of the Sea of Nectar region, aiming to achieve a more precise landing than previous lunar missions, which typically had precision levels of several kilometers to tens of kilometers. JAXA is currently investigating the specifics of its pinpoint landing and plans to release further information in the coming weeks. The spacecraft is engineered to achieve exceptional landing precision, due to a vision-based object detection system and its lightweight, compact design.　　This five-months long mission is intended to help the scientific community learn about the origin of the Moon. For this purpose, the spacecraft’s payload includes a multi-band spectral camera that can determine the composition of lunar rocks derived from the Moon’s mantle.　　Renesas provided a number of key components for the SLIM spacecraft’s integrated computer and electronic subsystems, which are designed to operate over a temperature range and tested to withstand total ionizing dose radiation rates as high as 300krad(Si). Among the ICs used for this mission are 3.3V and 5V RS-422 receivers, RS-422 drivers, a 16-channel analog multiplexer, a 40V rail-to-rail operational amplifier, and a 3A low-dropout voltage regulator.　　The Renesas Intersil brand has a long history in the space industry spanning more than six decades, beginning with the founding of Radiation Inc. in 1950. Since then, virtually every satellite, shuttle launch and deep-space exploration mission has included Intersil-branded products. Renesas leverages this experience to deliver efficient, thermally optimized and highly reliable SMD, MIL-STD-883 and MIL-PRF 38535 Class-V/Q Intersil-branded products for the defense, high-reliability (Hi-Rel), and rad-hard space markets. Renesas Intersil-brand rad-hard ICs support subsystems for mission critical applications in data communications transfer, power supplies and power conditioning, general protection circuitry, and telemetry, tracking and control (TT&C).　　Deep space is a challenging environment for spaceflight and asteroid exploration systems, particularly due to the intense radiation environment encountered in nearly all mission profiles. Design, layout, certain process technologies, and manufacturing steps like burn-in and total dose testing of ICs ensure predictable performance and prevent system failure while in flight and on long duration robotic and crewed missions to other planets. 
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Release time：2024-01-24 13:48 reading：2232 Continue reading>>

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